Publications
2026
Exploiting the insulator–metal transition of VO2 in photocatalytic methane conversion
Nature Energy 11, 613–622 · doi:10.1038/s41560-026-02013-w
Machine Learning: Science and Technology 7, Art. 25054 · doi:10.1088/2632-2153/ae55f9
2025
Electrically Activated W-Doped VO2 Films for Reliable, Large-Area, Broadband THz Wave Modulators
ACS Applied Materials and Interfaces 17, 24564–24577 · doi:10.1021/acsami.5c00777
Revealing a Pathway for Low-Temperature Recrystallization in Germanium
Advanced Science 12, Art. e07630 · doi:10.1002/advs.202507630
2024
Nuclear Instruments and Methods in Physics Research B 557, Art. 165491 · doi:10.1016/j.nimb.2024.165491
Journal of Applied Physics 136, Art. 64502 · doi:10.1063/5.0221152
Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC
Journal of Applied Physics 136, Art. 35902 · doi:10.1063/5.0205284
2023
Machine Learning: Science and Technology 4, Art. 15002 · doi:10.1088/2632-2153/acab4c
Thin Solid Films 782, Art. 140007 · doi:10.1016/j.tsf.2023.140007
2022
Adaptive gold/vanadium dioxide periodic arrays for infrared optical modulation
Applied Surface Science 585, Art. 152592 · doi:10.1016/j.apsusc.2022.152592
Basic study of the relaxation volume of crystalline defects in bcc iron
Computational Materials Science 215, Art. 111816 · doi:10.1016/j.commatsci.2022.111816
Journal of Applied Crystallography 55, 296–309 · doi:10.1107/S1600576722001406
Journal of Applied Physics 132, Art. 85905 · doi:10.1063/5.0096764
Journal of Materials Science 57, 20309–20319 · doi:10.1007/s10853-022-07876-4
Thin Solid Films 759, Art. 139461 · doi:10.1016/j.tsf.2022.139461
2021
Journal of Nuclear Materials 557, Art. 153308 · doi:10.1016/j.jnucmat.2021.153308
Applied Physics A 127, Art. 771 · doi:10.1007/s00339-021-04890-2
Structural Aspects of the Superionic Transition in AX2 Compounds With the Fluorite Structure
Frontiers in Chemistry 9, Art. 723507 · doi:10.3389/fchem.2021.723507
2020
Acta Materialia 201, 63–71 · doi:10.1016/j.actamat.2020.09.076
Nacre-like alumina composites based on heteroaggregation
Journal of the European Ceramic Society 40, 5773–5778 · doi:10.1016/j.jeurceramsoc.2020.06.049
Journal of Applied Crystallography 53, 587–593 · doi:10.1107/S1600576720002514
Symmetry degeneration and room temperature ferroelectricity in ion-irradiated SrTiO3
Journal of Physics: Condensed Matter 32, Art. 355405 · doi:10.1088/1361-648X/ab8ec7
Journal of Materials Science 55, 1753–1764 · doi:10.1007/s10853-019-04004-7
2019
Applied Physics A 125, Art. 28 · doi:10.1007/s00339-018-2325-7
Defects and mechanical properties in weakly damaged Si ion implanted GaAs
Physical Review B 99, Art. 245205 · doi:10.1103/PhysRevB.99.245205
Effect of temperature on Xe implantation-induced damage in 4H-SiC
Journal of Physics: Conference Series 1190, Art. 12015 · doi:10.1088/1742-6596/1190/1/012015
High-performance Python for crystallographic computing
Journal of Applied Crystallography 52, 882–897 · doi:10.1107/S1600576719008471
Nuclear Instruments and Methods in Physics Research B 458, 143–150 · doi:10.1016/j.nimb.2018.11.048
Strain engineering 4H-SiC with ion beams
Applied Physics Letters 114, Art. 221904 · doi:10.1063/1.5109226
Journal of Membrane Science 588, Art. 117199 · doi:10.1016/j.memsci.2019.117199
2018
Physical Review Materials 2, Art. 83605 · doi:10.1103/PhysRevMaterials.2.083605
Lattice strain in irradiated materials unveils a prevalent defect evolution mechanism
Physical Review Materials 2, Art. 13604 · doi:10.1103/PhysRevMaterials.2.013604
Applied Surface Science 433, 668–673 · doi:10.1016/j.apsusc.2017.09.202
2017
Applied Physics Letters 111, Art. 251902 · doi:10.1063/1.5010147
DxTools: Processing large data files recorded with the Bruker D8 diffractometer
Journal of Applied Crystallography 50, 967–974 · doi:10.1107/S1600576717005192
Journal of Applied Physics 121, Art. 55303 · doi:10.1063/1.4975117
Acta Materialia 140, 250–257 · doi:10.1016/j.actamat.2017.08.030
2016
Journal of Applied Crystallography 49, 845–855 · doi:10.1107/S1600576716005331
Physica Status Solidi A 213, 3221–3230 · doi:10.1002/pssa.201600209
Journal of Applied Crystallography 49, 311–316 · doi:10.1107/S1600576715021019
Role of thermal strain in the metal-insulator and structural phase transition of epitaxial VO2 films
Physical Review B 93, Art. 184106 · doi:10.1103/PhysRevB.93.184106
Size distribution of black spot defects and their contribution to swelling in irradiated SiC
Journal of Nuclear Materials 476, 132–139 · doi:10.1016/j.jnucmat.2016.04.044
Statistical Nature of Atomic Disorder in Irradiated Crystals
Physical Review Letters 116, Art. 245501 · doi:10.1103/PhysRevLett.116.245501
Applied Physics Letters 108, Art. 31903 · doi:10.1063/1.4939972
Strain relaxation in He implanted UO2 polycrystals under thermal treatment: An in situ XRD study
Journal of Nuclear Materials 476, 63–76 · doi:10.1016/j.jnucmat.2016.04.023
2015
Advanced techniques for characterization of ion beam modified materials
Current Opinion in Solid State and Materials Science 19, 19–28 · doi:10.1016/j.cossms.2014.09.007
Depth-dependent phase change in Gd2O3 epitaxial layers under ion irradiation
Applied Physics Letters 107, Art. 131903 · doi:10.1063/1.4932089
Diffuse X-ray scattering from ion-irradiated materials: A parallel-computing approach
Journal of Applied Crystallography 48, 252–261 · doi:10.1107/S1600576715000631
Mechanical response of UO2 single crystals submitted to low-energy ion irradiation
Journal of Nuclear Materials 467, 505–511 · doi:10.1016/j.jnucmat.2015.10.046
Polarization rotation in ferroelectric tricolor PbTiO3/SrTiO3/PbZr0.2Ti0.8O3 superlattices
ACS Applied Materials and Interfaces 7, 19906–19913 · doi:10.1021/acsami.5b03456
Nanoscale 7, 1437–1445 · doi:10.1039/c4nr05589f
2014
Comprehensive study of the effect of the irradiation temperature on the behavior of cubic zirconia
Journal of Applied Physics 115, Art. 183504 · doi:10.1063/1.4874795
Nuclear Instruments and Methods in Physics Research B 327, 9–14 · doi:10.1016/j.nimb.2013.10.086
Double-position-boundaries free 3C-SiC epitaxial layers grown on on-axis 4H-SiC
ECS Journal of Solid State Science and Technology 3, P75–P81 · doi:10.1149/2.012404jss
Journal of Nuclear Materials 451, 14–23 · doi:10.1016/j.jnucmat.2014.03.019
Physical Review B 90, Art. 174112 · doi:10.1103/PhysRevB.90.174112
Journal of Applied Physics 116, Art. 194104 · doi:10.1063/1.4901931
Applied Physics Letters 105, Art. 242901 · doi:10.1063/1.4904458
2013
3C-SiC heteroepitaxy on hexagonal SiC substrates
Materials Science Forum 740-742, 257–262 · doi:10.4028/www.scientific.net/MSF.740-742.257
Influence of elastic properties on the strain induced by ion irradiation in crystalline materials
Journal of Physics D: Applied Physics 46, Art. 45309 · doi:10.1088/0022-3727/46/4/045309
Polytypic transformations in SiC: Diffuse x-ray scattering and Monte Carlo simulations
Physical Review B 88, Art. 24103 · doi:10.1103/PhysRevB.88.024103
Materials Letters 107, 299–302 · doi:10.1016/j.matlet.2013.06.021
The Micro- and Nanostructure of Imperfect Oxide Epitaxial Films
Modern Diffraction Methods, 259–282 · doi:10.1002/9783527649884.ch9
2012
Physical Review B 86, Art. 100102 · doi:10.1103/PhysRevB.86.100102
Diffuse X-ray scattering from partially transformed 3C-SiC single crystals
Nuclear Instruments and Methods in Physics Research B 284, 19–22 · doi:10.1016/j.nimb.2011.09.008
Journal of Applied Physics 111, Art. 104106 · doi:10.1063/1.4716177
Proc. IEEE ISAF/ECAPD/PFM 2012, Art. 6297851 · doi:10.1109/ISAF.2012.6297851
Investigation of irradiation effects induced by self-ion in 6H-SiC combining RBS/C, Raman and XRD
Nuclear Instruments and Methods in Physics Research B 286, 108–113 · doi:10.1016/j.nimb.2011.11.018
Journal of Applied Physics 112, Art. 53919 · doi:10.1063/1.4748049
On the stability of 3C-SiC single crystals at high temperatures
Materials Science Forum 717-720, 493–496 · doi:10.4028/www.scientific.net/MSF.717-720.493
Nuclear Instruments and Methods in Physics Research B 277, 14–17 · doi:10.1016/j.nimb.2011.12.047
Strain effect in PbTiO3/PbZr0.2Ti0.8O 3 superlattices: From polydomain to monodomain structures
Journal of Applied Physics 112, Art. 114102 · doi:10.1063/1.4767329
2011
Applied Physics Letters 99, Art. 52905 · doi:10.1063/1.3619843
Journal of Applied Physics 110, Art. 53508 · doi:10.1063/1.3627371
Materials Science Forum 679-680, 153–156 · doi:10.4028/www.scientific.net/MSF.679-680.153
Oxygen incorporation effects in annealed epitaxial La (1-x)SrxMnO3 thin films
Journal of Applied Physics 109, Art. 123913 · doi:10.1063/1.3596807
Strain and stress build-up in He-implanted UO2 single crystals: An X-ray diffraction study
Journal of Materials Science 46, 4683–4689 · doi:10.1007/s10853-011-5375-1
X-ray study of antiphase domains and their stability in MBE grown GaP on Si
Journal of Crystal Growth 323, 409–412 · doi:10.1016/j.jcrysgro.2010.10.137
2010
A new way to prepare tin oxide precursor polymeric gels
Journal of Sol-Gel Science and Technology 55, 15–18 · doi:10.1007/s10971-010-2206-9
Journal of Physics D: Applied Physics 43, Art. 455408 · doi:10.1088/0022-3727/43/45/455408
Defects and polytypism in SiC: The role of diffuse X-ray scattering
AIP Conference Proceedings 1292, 43–46 · doi:10.1063/1.3518307
Journal of Applied Physics 107, Art. 34102 · doi:10.1063/1.3290956
Journal of Applied Physics 107, Art. 104107 · doi:10.1063/1.3400095
Thin Solid Films 518, 4654–4657 · doi:10.1016/j.tsf.2009.12.052
Quantitative analysis of diffuse X-ray scattering in partially transformed 3C-SiC single crystals
Journal of Applied Crystallography 43, 867–875 · doi:10.1107/S0021889810019412
Strain-profile determination in ion-implanted single crystals using generalized simulated annealing
Journal of Applied Crystallography 43, 1046–1052 · doi:10.1107/S0021889810030281
Study of the stability of 3C-SiC single crystals using high-resolution diffuse X-ray scattering
AIP Conference Proceedings 1292, 71–74 · doi:10.1063/1.3518314
2009
Microstructural study of SnO2 thin layers deposited on sapphire by sol-gel dip-coating
Thin Solid Films 518, 1–5 · doi:10.1016/j.tsf.2009.05.053
Applied Surface Science 256, 924–928 · doi:10.1016/j.apsusc.2009.08.089
Role of nanostructure on the optical waveguiding properties of epitaxial LiNbO3 films
Journal of Physics D: Applied Physics 42, Art. 145403 · doi:10.1088/0022-3727/42/14/145403
Journal of Applied Crystallography 42, 85–92 · doi:10.1107/S0021889808036406
Journal of Non-Crystalline Solids 355, 951–959 · doi:10.1016/j.jnoncrysol.2009.04.033
The 3C-6H polytypic transition in SiC as revealed by diffuse x-ray scattering
Applied Physics Letters 94, Art. 201904 · doi:10.1063/1.3141509
2008
Journal of Crystal Growth 310, 982–987 · doi:10.1016/j.jcrysgro.2007.11.149
Investigation of strain relaxation mechanisms and transport properties in epitaxial SmNiO3 films
Journal of Applied Physics 103, Art. 123501 · doi:10.1063/1.2938845
Thin Solid Films 517, 592–597 · doi:10.1016/j.tsf.2008.06.088
Prospects for 3C-SiC bulk crystal growth
Journal of Crystal Growth 310, 976–981 · doi:10.1016/j.jcrysgro.2007.11.140
Journal of Physics: Condensed Matter 20, Art. 145216 · doi:10.1088/0953-8984/20/14/145216
2007
Advances in original fibres fabrication using innovative techniques
Optical and Quantum Electronics 39, 1033–1045 · doi:10.1007/s11082-007-9157-6
Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scattering
Physica Status Solidi A 204, 2528–2534 · doi:10.1002/pssa.200675652
Applied Physics Letters 91, Art. 192110 · doi:10.1063/1.2800306
Epitaxial stabilization of SmNiO3 films on (0 0 1) SrTiO 3 substrates
Journal of Physics D: Applied Physics 40, 4872–4876 · doi:10.1088/0022-3727/40/16/017
Growth of LiNbO 3 thin films on sapphire by pulsed-laser deposition for electro-optic modulators
Applied Surface Science 253, 8263–8267 · doi:10.1016/j.apsusc.2007.02.112
High-temperature (1500 K) reciprocal space mapping on a laboratory X-ray diffractometer
Journal of Applied Crystallography 40, 332–337 · doi:10.1107/S0021889807003433
Materials Science and Engineering: B 144, 32–37 · doi:10.1016/j.mseb.2007.07.096
Influence of thickness on the epitaxial stabilisation of SmNiO3 thin films
Surface and Coatings Technology 201, 9021–9024 · doi:10.1016/j.surfcoat.2007.04.123
Journal of Materials Science 42, 4581–4590 · doi:10.1007/s10853-006-0560-3
Misfit dislocations in highly mismatched oxide interfaces, an X-ray diffraction study
Physica Status Solidi A 204, 2535–2541 · doi:10.1002/pssa.200675653
Self-patterned oxide nanostructures grown by post-deposition thermal annealing on stepped surfaces
Nanotechnology 18, Art. 15301 · doi:10.1088/0957-4484/18/1/015301
Thin Solid Films 515, 7080–7085 · doi:10.1016/j.tsf.2007.02.099
2006
Journal of Non-Crystalline Solids 352, 2152–2158 · doi:10.1016/j.jnoncrysol.2006.02.054
Morphological instabilities of a thin film on a Penrose lattice: A Monte Carlo study
Physics Letters A 351, 426–430 · doi:10.1016/j.physleta.2005.11.023
Applied Surface Science 253, 95–105 · doi:10.1016/j.apsusc.2006.05.086
Reciprocal-space mapping of epitaxic thin films with crystallite size and shape polydispersity
Acta Crystallographica A 62, 11–20 · doi:10.1107/S0108767305037657
Zeitschrift für Kristallographie 221, 123–128 · doi:10.1524/9783486992526-023
Zeitschrift für Kristallographie, Supplement 1, 123–128 · doi:10.1524/zksu.2006.suppl_23.123
X-ray diffuse scattering from stacking faults in thick 3C-SiC single crystals
Applied Physics Letters 89, Art. 91902 · doi:10.1063/1.2338787
X-ray scattering from interface dislocations in highly mismatched oxide epitaxial films
Zeitschrift für Kristallographie, Supplement 2, 263–268 · doi:10.1524/zksu.2006.suppl_23.263
2005
Control of the morphology of oxide nano-islands through the substrate miscut angle
Progress in Solid State Chemistry 33, 327–332 · doi:10.1016/j.progsolidstchem.2005.11.017
Highly localized strain fields due to planar defects in epitaxial SrBi2 Nb2 O9 thin films
Journal of Applied Physics 97, Art. 73503 · doi:10.1063/1.1870119
Instrumental aspects in X-ray diffraction on polycrystalline materials
Powder Diffraction 20, 294–305 · doi:10.1154/1.2136890
Review of Scientific Instruments 76, Art. 63912 · doi:10.1063/1.1938850
Journal of Physics D: Applied Physics 38, 3907–3920 · doi:10.1088/0022-3727/38/21/012
2004
Journal de Physique IV 118, 183–191 · doi:10.1051/jp4:2004118022
Growth and relaxation of (Zr,Y)O2 epitaxial layers analyzed by XRD reciprocal space mapping
Materials Science and Engineering: B 109, 42–46 · doi:10.1016/j.mseb.2003.10.082
Thin Solid Films 450, 66–70 · doi:10.1016/j.tsf.2003.10.075
2003
A new method for the determination of strain profiles in epitaxic thin films using X-ray diffraction
Journal of Applied Crystallography 36, 1424–1431 · doi:10.1107/S0021889803020351
Thin Solid Films 429, 55–62 · doi:10.1016/S0040-6090(03)00030-0
Ferroelectrics 288, 49–57 · doi:10.1080/00150190390212034
Ferroelectrics, Letters Section 30, 91–98 · doi:10.1080/07315170390274605
X-Ray diffraction from epitaxial oxide layers grown from sol-gel
Thin Solid Films 434, 1–6 · doi:10.1016/S0040-6090(02)00721-6
2002
A high-resolution X-ray diffractometer for the study of imperfect materials
Journal of Applied Crystallography 35, 606–614 · doi:10.1107/S0021889802011470
Journal de Physique IV 12, Pr6–273 · doi:10.1051/jp4:20020236
Microstructural analysis in epitaxial zirconia layers
Applied Surface Science 188, 80–84 · doi:10.1016/S0169-4332(01)00710-3
Planar faults in aurivillius compounds: An X-ray diffraction study
Philosophical Magazine A 82, 615–632 · doi:10.1080/01418610208239621
2001
Ceramic nanocomposites obtained by sol-gel coating of submicron powders
Acta Materialia 49, 811–816 · doi:10.1016/S1359-6454(00)00366-9
Miscut angles measurement and precise sample positioning with a four circle diffractometer
Applied Surface Science 180, 322–327 · doi:10.1016/S0169-4332(01)00369-5
Journal of Applied Crystallography 34, 699–703 · doi:10.1107/S0021889801011700
Stacking disorder in Aurivillius compounds studied by X-ray diffraction line profile analysis
Materials Science Forum 378-381, 753–758 · doi:10.4028/www.scientific.net/msf.378-381.753
X-Ray diffraction line broadening by stacking faults in SrBi2Nb2O9/SrTiO3 epitaxial thin films
Thin Solid Films 391, 42–46 · doi:10.1016/S0040-6090(01)00975-0
