Science des Procédés Céramiques et de Traitements de Surface (SPCTS)

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Centre National de la Recherche Scientifique (CNRS)
Université de Limoges
Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)


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Accueil du site > Axes de recherche > Axe 3 "Organisation structurale multiéchelle des matériaux" > Hétérostructures épitaxiales > Epitaxial heterostructures

Epitaxial heterostructures

Contact

Alexandre BOULLE : alexandre.boulle unilim.fr


Context/objectives

The physical properties of materials are not only determined by their chemical composition and structure, but are also heavily affected by strain and defects. In the case of epitaxial heterostructures (thin or thick films, multilayers,...) strain and defects are induced by the film/substrate lattice mismatch and the associated strain relaxation mechanisms. Our team aims at accurately characterizing strain and defects in such epitaxial structures by means of X-ray diffraction and diffuse scattering.

(004) reciprocal space map recorded from a irradiated 3C-SiC single crystal. The streak « D » stems the strain gradient within the irradiated layer. The streaks « SF » are due to stacking faults lying in the 111 planes.


Activities

  • Microstructural characterization of epitaxial films and single crystals using high-resolution X-ray diffraction and diffuse scattering (laboratory and synchrotron)
  • Diffuse scattering studies of defects (stacking faults, dislocations,...)
  • Determination of strain gradients in epitaxial structures
  • Polytypic transitions in 3C-SiC single crystals (in collaboration with LMGP-Grenoble and IP’-Poitiers)
  • Analysis of irradiation induced strain and damage in implanted single crystals (ZrO2, UO2, SiC,...) (in collaboration with CSNSM-Orsay)


Key facts

  1. D. DOMPOINT, A. BOULLE, I. GALBEN-SANDULACHE, D. CHAUSSENDE, L. T. M. HOA, T. OUISSE, D. EYIDI, J. L. DEMENET, M. F. BEAUFORT, J. RABIER
    Kinetics of the 3C-6H polytypic transition in 3C-SiC single crystals : a diffuse X-ray scattering study
    J. Appl. Phys. 110, 2011, 053508 1-8

  2. A. BOULLE, A. DEBELLE
    Strain profile determination in ion implanted single crystals using generalized simulated annealing
    J. Appl. Cryst. 43, 2010, 1046-1052

  3. A. BOULLE, D. DOMPOINT, I. G. GALBEN-SANDULACHE, D. CHAUSSENDE
    Quantitative analysis of diffuse X-ray scattering in partially transformed 3C-SiC single crystals
    J. Appl. Cryst. 43, 2010, 867-875

  4. A. BOULLE, J. AUBE, I. G. GALBEN-SANDULACHE, D. CHAUSSENDE
    The 3C – 6H polytypic transition in SiC as revealed by diffuse X-ray scattering
    Appl. Phys. Lett. 94, 2009, 201904 1-3

Updated April 4, 2012

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