Offre de post doctorat à l’IEMN de Lille

This subject intends to improve the GaN HEMTs technology based on flexible substrate in order to fabricate autonomous RF TAG. Transistors supported on flexible substrate were fabricated at IEMN. Devices with short gate length (120nm) exhibit a maximum drain current of 470 mA/mm. Moreover, for the first time to our knowledge, small signal microwave performances of AlGaN/GaN HEMT on flexible substrate are reported showing no degradation consecutive to the transfer process. As a result, Ft and Fmax of 32GHz and 52GHz respectively are obtained on both Silicon and flexible substrates.
Long term objective is to increase power dissipated or working frequency taking into account low thermal conductivity of flexible substrate (1 or 2W/mm at 10GHz).


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